MiUSE:三重大学 学術機関リポジトリ 研究成果コレクション に登録し、オープンアクセス化した論文へのリンク
SharedIT:オープンアクセス(read only), Researcg Square : オープンアクセス(Preprint, able to download)
(1) Karen Akatsuka, Kazumasa Hiramatsu and Atsushi Motogaito, "TM- and TE-polarization-selective narrowband perfect absorber for near-ultraviolet light using Fano resonance in an aluminum nanohole array structure ", Applied Physics B, 130, 64 (2024). https://doi.org/10.1007/s00340-024-08198-w Sharedit Research Square
(2) Atsushi Motogaito, Akitaka Harada and Kazumasa Hiramatsu, "Fabrication and Operation Analysis of a Surface-Plasmon Sensor Using a Nonpropagating Mode ", Plasmonics (2023). https://doi.org/10.1007/s11468-023-02111-5 SharedIt Research Square
(3) Atsushi Motogaito, Yukino Hayashi, Akinori Watanabe and Kazumasa Hiramatsu, "Fabrication of Polarization Control Devices Using Metal Grating Structures", Optics and Photoics Journal, 12, pp.201-213 (2022). https://doi.org/10.4236/opj.2022.129015
(4) Atsushi Motoaito, Ryoga Tanaka and Kazumasa Hiramatsu, "Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures ", Journal of European Optical Society-Rapid Publications, 17, 6 (2021). https://jeos.springeropen.com/articles/10.1186/s41476-021-00151-0
(5) Atsushi Motoaito, Yosuke Iguchi, Shuji Kato and Kazumasa Hiramatsu, "Fabrication and characterization of a binary diffractive lens for controlling focal distribution ", Applied Optics, 59, pp.742-747 (2020). https://doi.org/10.1364/AO.381139 MiUSE
(6)
Atsushi
Motogaito and Yusuke Ito, “Excitation
Mechanism of Surface Plasmon Polaritons for Surface Plasmon Sensor
with 1D Metal Grating Structure for High Refractive Index Medium”,
Photonic Sensors, 9, pp.
11-18 (2019).
(7)
Atsushi
Motogaito, Tomoyasu Nakajima, Hideto
Miyake and Kazumasa Hiramatsu, “Excitation mechanism of surface
plasmon polaritons in a double- layer wire grid structure”, Applied
Physics A 123, 729 (2017).
(8)
Atsushi
Motogaito, Naoki Hashimoto, Kazumasa
Hiramatsu and Katsusuke Murakami, “Study of Plant Cultivation Using
a Light-Emitting Diode Illumination System to Control the Spectral
Irradiance Distribution”, Optics and Photonics Journal, 7,
pp.101-108 (2017).
(9)
元垣内敦司、“LEDを用いた植物栽培”、O
plus E, 39, pp.657-661(2017)
(10)
Atsushi
Motogaito, Shinya Mito, Hideto Miyake
and Kazumasa Hiramatsu, “Detecting High-Refractive-Index Media Using
Surface Plasmon Sensor with One-Dimensional Metal Diffraction
Grating”, Optics and Photonics Journal, 6, pp.164-170 (2016).
(11)
Atsushi
Motogaito, Masanori Kito, Hideto
Miyake and Kazumasa Hiramatsu, “Fabrication and optical
characterization of a 2D metal periodic grating structure for cold
filter application”, Proceedings of SPIE Micro+Nano Materials,
Devices, and Systems, 9668, pp.96681Q-1 – 96681Q-6 (2015).
(12)
Atsushi
Motogaito, Yuuta Morishita, Hideto
Miyake and Kazumasa Hiramatsu, “Extraordinary Optical Transmission
Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid
Polarizer”, Plasmonics, 10, pp.1657-1662 (2015).
(13)
Atsushi
Motogaito, Shohei Nakamura, Jyun
Miyazaki, Hideto Miyake and Kazumasa Hiramatsu, “Using
surface-plasmon polariton at the GaP-Au interface in order to detect
chemical species in high-refractive-index media”, Optics
Communications, 341, pp.64-68 (2015).
(14)
Atsushi
Motogaito and Kazumasa Hiramatsu,
“Fabrication of Binary Diffractive Lenses and the Application to LED
Lighting for Controlling Luminosity Distribution”, Optics and
Photonics Journal, 3, pp.67-73 (2013).
(15)
元垣内敦司、真部勝英、平松和政、“地元の伝統工芸品の新しい照明への活用―伊勢形紙をシェードとして用いたLED感性系照明の開発―”、照明学会誌、97、pp.381-385
(2013).
(16)
Atsushi
Motogaito, Narito Machida,Tadanori
Morikawa, Katsuhide Manabe, Hideto Miyake and Kazumasa Hiramatsu,
“Fabrication of a binary diffractive lens for controlling the
luminous intensity distribution of LED light”, Optical Review, 16,
pp.455-457 (2009).
(17)
Hideto Miyake,
Takeharu Ishii, Atsushi Motogaito, and Kazumasa Hiramatsu,
“Improved optical properties of AlGaN using periodic structures”,
Physica Status Soidi (c), 5, pp.1822-1824 (2008)
(18)
Atsushi
Motogaito, Katsuhide Manabe, Yuuki
Yamanaka, Narito Machida, Hideto Miyake and Kazumasa Hiramatsu,
Journal of Light & Visual Environment, 32, pp.218-221 (2008).
(19)
Yasuhiro Shibata,
Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu,
Youichiro Ohuchi, Hiroaki Okagawa, Kazuyuki Tadatomo, Tatsuya
Nomura, Yutaka Hamamura and Kazutoshi Fukui, Materteral Research
Society Symposium Proceedings, 831, pp. E3.12.1-E3.12.6 (2005).
(20)
Atsushi
Motogaito, Kazumasa Hiramatsu,
Yasuhiro Shibata, Hironobu Watanabe, Hideto Miyake, Kazutoshi Fukui,
Youichiro Ohuchi, Kazuyuki Tadatomo and Yutaka Hamamura,
“Characterization of III-nitride Based Schottky UV Detectors with
Wide Detectable Wavelength Range (360-10 nm) using Synchrotron
Radiation”, Materteral Research Society Symposium Proceedings, 798,
pp. Y6.6.1-Y6.6.6 (2004).
(21)
Hideto Miyake,
Hironori Yasukawa, Yoshihiro Kida, Keiichi Ohta, Yasuhiro Shibata,
Atsushi Motogaito, Kazumasa Hiramatsu, Youichiro Ohuchi,
Kazuyuki Tadatomo, Yutaka Hamamura and Kazutoshi Fukui, “High
performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N
on AlN epitaxial layer,Physica
Status Solidi (a), 200, pp.151-154 (2003).
(22)
Atsushi
Motogaito, Hironobu Watanabe, Kazumasa
Hiramatsu, Kazutoshi Fukui, Yutaka Hamamura and Kazuyuki Tadatomom
“Characterization of GaN based Schottky UV detectors in the vacuum
UV (VUV) and the soft X-ray (SX) region (10–100 nm)”, Physica Status
Solidi (a), 200, pp.147-150 (2003).
(23)
Kazumasa Hiramatsu
and Atsushi Motogaito, “GaN-based Schottky barrier
photodetectors from near ultraviolet to vacuum ultraviolet (360–50
nm)”, Physica Status Solidi (a), 195, pp.496-501 (2003).
(24)
Atsushi
Motogaito, Keiichi Ohta, Kazumasa
Hiramatsu, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura and
Kazutoshi Fukui, “Effects of the Schottky electrode structure in GaN
based UV-VUV (50-360 nm) photodetector”. Materteral Research Society
Symposium Proceedings, 693, pp. 761-766 (2002).
(25)
Atsushi
Motogaito, Keiichi Ohta, Kazumasa
Hiramatsu, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura and
Kazutoshi Fukui, “Characterization of GaN Based UV‐VUV Detectors in
the Range 3.4–25 eV by Using Synchrotron Radiation”, Physica Status
olidi (a), 188, pp.337-340 (2001).
(26)
Atsushi
Motogaito, Motoo Yamaguchi, Kazumasa
Hiramatsu, Masahiro Kotoh, Youichiro Ohuchi, Kazuyuki Tadatomo,
Yutaka Hamamura and Kazutoshi Fukui, “Characterization of GaN-Based
Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum
Ultraviolet (VUV) Region Using Synchrotron Radiation”, Japanese
Journal of Applied Physics, 40, pp.L368-370 (2001).
(27)
Kazumasa
Hiramatsu, Masahiro Haino, Motoo Yamaguchi, Hideto Miyake, Atsushi
Motogaito, Nobuhiko Sawaki, Yasushi Iyechika and Takayoshi
Maeda, “GaN layer structures with buried tungsten nitrides (WNx)
using epitaxial lateral overgrowth via MOVPE”, Materials Science and
Engineering: B, 82, pp.62-64 (2001).
(28)
Masahiro Haino,
Motoo Yamaguchi, Hideto Miyake, Atsushi Motogaito, Kazumasa
Hiramatsu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Yasushi Iyechika
and Takayoshi Maeda, “Buried Tungsten Metal Structure Fabricated by
Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor
Phase Epitaxy”, Jaanese Journal of Applied Physics, 39, pp.
L449-L452 (2000).
(29)
Kazumasa Hiramtsu,
Atsushi Motogaito, Hideto Miyake, Yoshiaki Honda, Yasushi
Itechika, Takayoshi Maeda, Frank Bertram, Jüergen
Christen, and Axel Hoffman, “Crystalline and Optical Properties of
ELO GaN by HVPE Using Tungsten Mask”. IEICE Transactions on
Electronics, E83-C, pp.620-626 (2000).
(30)
Kazumasa
Hiramatsu, Katsuya Nishiyama, Masaru Onishi, Hiromitsu Mizutani,
Mitsuhisa Narukawa, Atsushi Motogaito, Hideto Miyake, Yasushi
Iyechika and Takayoshi Maeda, “Fabrication and characterization of
low defect density GaN using facet-controlled epitaxial lateral
overgrowth (FACELO), Journal of Crystal Growth, 221, pp.316-326
(2000).
(31)
Hideto Miyake,
Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa
Hiramatsu, Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki,
Yasushi Iyechika, Takayoshi Maeda and Isamu Akasaki, “Fabrication of
GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral
Overgrowth (ELO) via LP-MOVPE”, Materials Research Society Symposium
- Proceedings, 595 W2.3.1-W2.3.6 (2000).
(32)
Kazumasa
Hiramatsu, Katsuya Nishiyama, Atsushi Motogaito, Hideto
Miyake, Yasushi Iyechika and Takayoshi Maeda, “Recent Progress in
Selective Area Growth and Epitaxial Lateral Overgrowth of
III-Nitrides: Effects of Reactor Pressure in MOVPE Growth”, Physica
Status Solidi (a), 176, pp. 535-543 (1999).
(33)
Hideto Miyake,
Atsushi Motogaito and Kazumasa Hiramatsu, “Effects of Reactor
Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure
Metalorganic Vapor Phase Epitaxy”, Japanese Journal of Applied
Physics, 38, pp. L1000-L1002 (1999).
(34)
Atsushi
Motogaito, Masakazu Kimura, Sadik
Dost, Hironobu Katsuno, Akira Tanaka and Tokuzo Sukegawa, “Growth of
alloy GalnP crystals by compositional conversion of InP layers grown
on GaP substrates in an LPE system”, Journal of Crystal Growth, 182,
pp.275-280 (1999).
(35)
Haruhiko Udono,
Atsushi Motogaito, Masakazu Kimura, Akira Tanaka and Tokuzo
Sukegawa, “Suppression of twins in GaAs layers grown on a GaP(111) B
substrate by liquid phase epitaxy”, Journal of Crystal Growth, 169,
pp.181-184 (1996).